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PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
Rev. 01 -- 1 November 2005 Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients.
1.2 Features
s s s s ESD protection of two lines Max. peak pulse power: PPP = 350 W Low clamping voltage: VCL = 26 V Small SMD plastic package s s s s Ultra low leakage current: IRM < 90 nA ESD protection up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 15 A
1.3 Applications
s Computers and peripherals s Audio and video equipment s Cellular handsets and accessories s Communication systems s Portable electronics s Subscriber Identity Module (SIM) card protection
1.4 Quick reference data
Table 1: Symbol VRWM Quick reference data Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Cd diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VR = 0 V; f = 1 MHz 101 75 19 16 11 pF pF pF pF pF 3.3 5.0 12 15 24 V V V V V Conditions Min Typ Max Unit
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description cathode 1 cathode 2 double cathode
1 2
3
Simplified outline
3
Symbol
1
2
006aaa155
3. Ordering information
Table 3: Ordering information Package Name PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4: Marking codes Marking code [1] V3* V4* V5* V6* V7* Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
2 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP peak pulse current PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Tj Tamb Tstg
[1] [2]
Conditions tp = 8/20 s
[1] [2]
Min -
Max 350 350 200 200 200 15 13 5 5 3 150 +150 +150
Unit W W W W W A A A A A C C C
tp = 8/20 s
[1] [2]
-65 -65
junction temperature ambient temperature storage temperature
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to 3 or 2 to 3.
Table 6: Symbol VESD
ESD maximum ratings Parameter electrostatic discharge voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT PESDxL2BT series HBM MIL-STD883 23 10 kV kV Conditions IEC 61000-4-2 (contact discharge)
[1] [2]
Min
Max
Unit
-
30
kV
[1] [2]
Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 to 3 or 2 to 3.
Table 7:
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
ESD Standard IEC 61000-4-2, level 4 (ESD) HBM MIL-STD883, class 3
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(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
3 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
001aaa631
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5
Fig 2. ESD pulse waveform according to IEC 61000-4-2
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
4 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8: Characteristics Tamb = 25 C unless otherwise specified. Symbol VRWM Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IRM reverse leakage current PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VBR breakdown voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Cd diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VCL clamping voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP = 1 A IPP = 15 A IPP = 1 A IPP = 13 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A
[1] [2]
Conditions
Min -
Typ 0.09 0.01 <1 <1 <1 6.4 7.6 15.8 18.8 27.8
Max 3.3 5.0 12 15 24 2 1 50 50 50 6.9 8.2 16.7 20.3 30.3
Unit V V V V V A A nA nA nA V V V V V
VRWM = 3.3 V VRWM = 5.0 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IR = 5 mA
5.8 7.0 14.2 17.1 25.4
VR = 0 V; f = 1 MHz 101 75 19 16 11 8 26 10 28 20 37 25 44 40 70 pF pF pF pF pF V V V V V V V V V V
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
5 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
Table 8: Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol rdif Parameter differential resistance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT
[1] [2]
Conditions IR = 1 mA
Min -
Typ -
Max 400 80 200 225 300
Unit
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to 3 or 2 to 3.
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
6 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
104 PPP (W) 103
(1)
006aaa531
1.2 PPP PPP(25 C) 0.8
001aaa193
(2)
102
0.4
10 1 10
102
103 tp (s)
104
0 0 50 100 150 Tj (C) 200
Tamb = 25 C (1) PESD3V3L2BT and PESD5V0L2BT (2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT
Fig 3. Peak pulse power as a function of exponential pulse duration tp; typical values
110 Cd (pF) 100
006aaa067
Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values
20 Cd (pF) 16
006aaa068
90
(1)
12
(1)
80 8 70
(2) (2) (3)
60
4
50 0 1 2 3 4 VR (V) 5
0 0 5 10 15 20 VR (V) 25
Tamb = 25 C; f = 1 MHz (1) PESD3V3L2BT (2) PESD5V0L2BT
Tamb = 25 C; f = 1 MHz (1) PESD12VL2BT (2) PESD15VL2BT (3) PESD24VL2BT
Fig 5. Diode capacitance as a function of reverse voltage; typical values
Fig 6. Diode capacitance as a function of reverse voltage; typical values
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
7 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
IPP 10 IRM IRM(25C)
006aaa069
(1)
-VCL -VBR -VRWM 1
IR IRM -IRM -IR VRWM VBR VCL
-
+
10-1 -100
-50
-IPP 0 50 100 Tj (C) 150
006aaa676
(1) PESD3V3L2BT, PESD5V0L2BT PESD12VL2BT, PESD15VL2BT and PESD24VL2BT: IRM < 20 nA; Tj = 150 C
Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values
Fig 8. V-I characteristics for a bidirectional ESD protection diode
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
8 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
ESD TESTER RZ CZ D.U.T. (Device Under Test)
450
RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 20 V/div; horizontal scale = 50 ns/div PESD24VL2BT GND PESD15VL2BT GND PESD12VL2BT GND PESD5V0L2BT GND
GND GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
PESD3V3L2BT
clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
vertical scale = 20 V/div; horizontal scale = 50 ns/div GND GND PESD3V3L2BT
GND GND
PESD5V0L2BT
PESD12VL2BT
GND
PESD15VL2BT
GND PESD24VL2BT vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
006aaa162
Fig 9. ESD clamping test setup and waveforms
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
9 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
7. Application information
The PESDxL2BT series is designed for the protection of two bidirectional signal lines from the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on lines where the signal polarities are above and below ground. The PESDxL2BT series provides a surge capability of up to 350 W per line for an 8/20 s waveform.
line 1 to be protected line 2 to be protected
PESDxL2BT
GND
006aaa163
Fig 10. Application diagram
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxL2BT as close to the input terminal or connector as possible. 2. The path length between the PESDxL2BT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
10 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
8. Package outline
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
9. Packing information
Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT
[1] For further information and the availability of packing methods, see Section 15.
Package SOT23
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -215 10000 -235
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
11 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
10. Revision history
Table 10: Revision history Release date 20051101 Data sheet status Product data sheet Change notice Doc. number 9397 750 14034 Supersedes Document ID PESDXL2BT_SER_1
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
12 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
11. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
14. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14034
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 1 November 2005
13 of 14
Philips Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
16. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 November 2005 Document number: 9397 750 14034
Published in The Netherlands

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